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| What is Roiceram-HS |
Roiceram-HS is highly purified silicon carbide/silicon components for semiconductor manufacturing furnace.
It is developed and refined by Asahi Glass Company. |
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Roiceram-HS is specially designed and produced to demonstrate its best performance in a semi conductor manufacturing process. |
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Major Japanese furnace manufacturers have approved Roiceram-HS as an OEM component. Roiceram-HS is widely used by semi conductor fabricators, resulting in better yields and higher furnace operati0n efficiency. |
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| For high temperature process… |
| Because of superior strength in high temperature processing, Roiceram-HS does not deform from repeated use over 1000℃. Wafer slots and rods (rails) in boats retain their original profile. Based upon the products stability/ resistance to HF in the etching, its service life increases greatly. |
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| For LPCVD process… |
| Thermal expansion coeffient of Roiceram-HS and deposition film of LPCVD process (e.g. poly silicon, silicon nitride) is consistent, thus particle generation from the component is not a factor. This similarity allows increased film thickness which extend etch cycle time. The result is operational efficiency of LPCVD furnace is greatly improved. Periodic replacement, which is typical with quartz components, can be eliminated because Roiceram-HS is inert in the wet etch cleaning process(i.e. HF and HF+HNO3). |
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| State-of-the-Art Products: highly functional, achieved by high purity. Made possible by Asahi Glass's integrated strengths |
| 高纯度SiC (Roiceram-HS) |
| Roiceram-HS系由高纯度的SiC材料所制造而来，主要运用于半导体制造工程中的热处理制程。其质地紧密、具高强度，在氧化、扩散、LPCVD等各制程中即使在1,200℃以上的高温条件之下亦能安定的发挥其性能；在提升制程品质与效率上有其卓著的功用。且可以CVD方法在其上再成长一层超高纯度SiC膜，此膜具极强之耐药性与耐腐蚀性。 |
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| Silicon Carbide (Roiceram-HS) |
Roiceram-HS is highly purified silicon caride/silicon components for semiconductor manufacturing furnaces.
Because of superior strength in high temperature processing, Roiceram-HS does not deform from repeated use over 1,200℃, and it contributes the improvement of product quality and manufacturing efficiency on oxidation process, diffusion process, and LPCVD process.
We provide super-purified SiC coated with CVD method, and it has excellent chemical stability or resistance. |
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| SiC Dummy Wafer |
| 旭硝子所制造之SiC Dummy Wafer系以 CVD Coating method 和 fine-ceramic 之加工技术所生产而成之具超高纯度、高耐腐蚀性与高强度的产品。此产品目前已运用在氧化、扩散、APCVD与LPCVD等各种制程中，与一般之Si -Dummy Wafer相较，在COO与TAT（Turn Around Time）上的表现更令人侧目。目前新开发出之black-type SiC dummy wafer可被wafer sensor所检测到，更增广其可运用范围。 |
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| SiC Dummy Wafers |
ASAHI GLASS has developed dummy wafers of SiC, a super-high purity and corrosion-resistant material, using the CVD coating method on Roiceram-HS and fine-ceramic machining technology, Use of CVD coating alone, i.e., 100% SiC, gives these dummy wafers advantages over Roiceram-HS in terms of higher chemical stability, much higher oxidation resistance and superior strength. They have already been qualified in many processes, including not only high-temperature oxidation processes but also APCVD and LPCVD processes.
They new black-type SiC dummy wafers also have the advantage that they can be readily detected by optical wafer sensors and can be used for a wider range of applications. |
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| 详细产品特性 Feature |
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| Purity |
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Purity of Roiceram-HS satisfies specifications from both furnace manufacturers and semiconductor fabricators. Roiceram-HS is widely accepted by worldwide users.
Purity level of the material is shown is Table 1.
Substrate of Roiceram-HS has comparable impurities similar to those found in conventional quartz. CVD-SiC coating for Roiceram-HS has superb purity. Contents of impurity elements are far less than quartz. It is preferred in the process that requires the use of high purity components. SiC-CVD coating firmly adheres to substrate of SiC, which has excellent uniformity and solidity. The coating is durable to thermal and chemical treatment.
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| Strength in high temperature |
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Exceptional strength of Roiceram-HS and durability in temperature over 1000℃ keeps the component from thermal deformation and softening.
This durability maintains wafer slots of boats to initially machined tolerances thus allowing long life times of auto-wafer-transfer systems.
Based on structural integrity, reinforcing members are reduced from conventional quartz component design. The component can be designed simple, resulting in less heat mass.
Table 2 shows a comparison of strength and softening point.
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| Similarity of Thermal Expansion Coefficient |
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One of the major causes of particle generation from furnace components is differential of thermal expansion coefficient between component itself and deposited film.
Thermal expansion coefficient of Roiceram-HS is very close to the deposition films (e.g. poly silicon, silicon nitride).
Cracking issues that appear on quartz component can be eliminated in all cases. Particle generation caused by peeling film from the quartz surface is not an issue with
Roiceram-HS. Increased allowance of film deposition extends maintenance intervals, while reducing furnace down time. |
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| Chemical stability |
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Chemical stability of Roiceram-HS in the etch cleaning process is extremely high, these by making impervous to erosion by HF or HF+HNO3.
The etch ratio is less than 1/1000, when compared to quartz.(See Figure 2)
The material surface is unchanged after acid cleaning. Wafer slots remain unchanged in the cleaning process from a view point of auto-wafer-transfer systems.
As SiC-CVD coating blocks silicon erosion from substrate by acid, thus greatly improving life time of Roiceram-HS. |
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| Technical Support |
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| Some replacements of quartz to silicon carbide require thermal stress analysis, due to difference of mechanical properties. When the stress value is critical, it may result in fracture of a component. Asahi and AGEM provide not only products but analytic consulting for conventional and new application technology. The result of design review applied to product design, to optimize product configuration. Modification can reduce heat mass of the product, thus creating beneficial dynamic characteristics within the furnace operation. |
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| Production/Quality |
ormed by slip casting, Roiceram-HS has a higher degree of flexibility to overcome diverse system configuration. Thin and uniform wall thicknesses are ideal for tubes and cantilever, based on the light weight product design. With less volume, the furnace temperature controls are enhanced.
Roiceram-HS production is controlled from the very beginning, from the grain, to forming, sintering, machining, cleaning, and finally inspection. Although silicon carbide is one of the hardest materials to machine, advanced machining technique have been applied to meet customers strict requirement for dimensional precision. |
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| Quick response with the emphasis on quality for technical innovation. |
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Research & Development
Some cases to design new semiconductor manufacturing equipments require examining mechanical properties and thermal stress.
ASAHI GLASS provides not only products but analytic consulting for conventional and new application technology. The result of design review applied to product specification to optimize product configuration. Modification can reduce heat mass of products, thus creating beneficial dynamic characteristics within the furnace operation.
ASAHI GLASS Electronic Technology Development Center and Research Center are in charge of technical renovation for semiconductor business. |
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